![23N50 Silan MOSFET origional new - [ pack of 4pcs ]](https://electriccorner.co.in/wp-content/uploads/2024/12/Untitled-design-17.png)
Description
Key Specifications:
- Voltage and Current Ratings:
- Drain-Source Voltage (Vds): 500V
- Continuous Drain Current (Id): 23A (at 25°C)
- Power Dissipation:
- Maximum Power Dissipation (Pd): ~200W (varies with packaging and heatsinking).
- Performance:
- Rds(on): Low on-state resistance for reduced conduction losses.
- Gate Threshold Voltage (Vgs): Typically around 4.5V, suitable for standard drive circuits.
- Fast Switching: Optimized for high-frequency operations.
- Thermal Characteristics:
- Designed to handle high temperatures with effective heat dissipation.
- Applications:
- Welding machine inverters.
- Power factor correction (PFC) circuits.
- High-frequency switching power supplies.
- package contain 4pcs in box
![40U120 Silan IGBT is a high-power Insulated Gate Bipolar Transistor (IGBT)- [ 4 pcs pack ]](https://electriccorner.co.in/wp-content/uploads/2024/12/ELECTRIC-CORNER-9479561361-16-300x300.png)
40U120 Silan IGBT is a high-power Insulated Gate Bipolar Transistor (IGBT)- [ 4 pcs pack ]
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